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Diodes & RectifiersCode 5bfb3dbef2
TRS6A65F 650V 6A Schottky Barrier Diode
Marked "TRS6A65F" on the package with Toshiba's logo, this is Toshiba's TRS6A65F, a Silicon Carbide (SiC) Schottky Barrier Diode from Toshiba Semiconductor.
- Delivery in 2 to 4 working daysFree in Islamabad & Rawalpindi above Rs 5,000
- Cash on deliveryPay when your parcel arrives
- 7-day checking warrantyDead-on-arrival items replaced
- Packed with careAnti-static & padded packaging
Highlights
- High-efficiency, high-speed switching applications
- Switch-mode power supplies (SMPS)
- PFC boost diode stages
- DC-DC converters requiring low switching loss
- 1 x Toshiba TRS6A65F SiC Schottky Barrier Diode (TO-220F-2L)
Specifications
- Type
- Silicon Carbide (SiC) Schottky Barrier Diode
- Manufacturer
- Toshiba Semiconductor and Storage
- Package Marking
- TRS6A65F
- Reverse Voltage
- 650V
- Forward Current
- 6A
- Reverse Recovery Time (trr)
- 0ns
- Pin Configuration
- Pin 1 = Cathode, Pin 2 = Anode
About this product
Description
Marked "TRS6A65F" on the package with Toshiba's logo, this is Toshiba's TRS6A65F, a Silicon Carbide (SiC) Schottky Barrier Diode from Toshiba Semiconductor. It's rated 650V/6A in a 2-pin (2+Tab) TO-220F-L package. The package layout is cathode on pin 1, anode on pin 2, in the TO-220F-2L outline.
As with Toshiba's broader SiC Schottky diode range, it's suited for high-efficiency, high-speed switching applications, offering low-loss and high-efficiency power conversion, low leakage current, high-speed switching, and recovery characteristics that are independent of temperature. Reverse recovery time (trr) is effectively 0ns, a hallmark of SiC Schottky technology versus silicon fast-recovery diodes.
Key Specifications
Common Applications
Package Includes
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