Transistors & MOSFETsCode a28c3e61f8
TK31A60W 600V 30.8A N-Channel Power MOSFET
Marked "K31A60W" on the package with Toshiba's logo (the "T" prefix is dropped in the on-body marking), this is Toshiba's TK31A60W, an N-channel MOSFET rated…
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- 7-day checking warrantyDead-on-arrival items replaced
- Packed with careAnti-static & padded packaging
Highlights
- Switching voltage regulators
- Offline SMPS and flyback converters
- General-purpose 600V-class power switching designs requiring higher current handling than the TK12A60W/TK16A60W siblings
- 1 x Toshiba TK31A60W N-Channel Power MOSFET (TO-220SIS)
Specifications
- Type
- N-Channel Enhancement Mode Power MOSFET (Super Junction / DTMOSIV)
- Manufacturer
- Toshiba Semiconductor
- Package Marking
- K31A60W
- Drain-Source Voltage (VDSS)
- 600V
- Continuous Drain Current (ID)
- 30.8A
- Gate-Source Voltage (VGS)
- 30V max
- Gate Threshold Voltage (Vth)
- 2.7 to 3.7V
- Power Dissipation
- 45W
- Total Gate Charge (Qg)
- 86nC
- Max Junction Temperature
- 150°C
- Output Capacitance (Coss)
- 70pF
About this product
Description
Marked "K31A60W" on the package with Toshiba's logo (the "T" prefix is dropped in the on-body marking), this is Toshiba's TK31A60W, an N-channel MOSFET rated 600V with an on-resistance of 0.088Ω at 10V gate drive, built in the TO-220SIS package on Toshiba's DTMOSIV process. The isolated TO-220SIS outline simplifies mounting to a heatsink without a separate insulating pad. It's the highest-current member of the same 600V DTMOSIV family that includes the TK12A60W and TK16A60W.
Key features include a low typical drain-source on-resistance of RDS(ON) = 0.073Ω, achieved through a super junction structure (DTMOS), easy gate switching control, and enhancement-mode operation with a gate threshold voltage of 2.7 to 3.7V (VDS = 10V, ID = 1.5mA). It's intended primarily for switching voltage regulator applications.
Key Specifications
•RDS(ON), typical: 0.073Ω
Common Applications
Package Includes
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