Transistors & MOSFETsCode 9bbc362ac5
Original IRF3205 n Channel Power MOSFET
IRF3205 N-Channel HEXFET Power MOSFET
- Delivery in 2 to 4 working daysFree in Islamabad & Rawalpindi above Rs 5,000
- Cash on deliveryPay when your parcel arrives
- 7-day checking warrantyDead-on-arrival items replaced
- Packed with careAnti-static & padded packaging
Highlights
- Power Management Systems
- Industrial Applications
- Portable Devices
- Consumer Electronics
- Battery Chargers and Battery Management Systems
- Fast Switching Applications (e.g., UPS, Battery Backup systems)
- Solar-related Applications
- Uninterruptible Power Supplies
Specifications
- Transistor Type
- N-Channel
- Package Type
- TO-220
- Drain-to-Source Voltage (Vds)
- 55V (Max)
- Gate-to-Source Voltage (Vgs)
- ±20V (Max)
- Continuous Drain Current (Id)
- 110A at Vgs 10V, 25°C (Max)
- Pulsed Drain Current (Idm)
- 390A (Max)
- On-Resistance (Rds(on))
- 8mΩ at Vgs 10V
- Power Dissipation (Pd)
- 200W (Max)
About this product
The IRF3205 from International Rectifier is a robust N-channel HEXFET power MOSFET in a TO-220AB package, designed for high efficiency and reliability across a wide range of applications. It boasts extremely low on-resistance per silicon area, a dynamic dv/dt rating, and fast switching capabilities.
•Minimum Gate Threshold Voltage (Vgs(th)): 2V to 4V (Required to conduct)
•Operating & Storage Junction Temperature: -55°C to 175°C
•Motor Drivers
•High Power Audio Amplifiers
Replacement and Equivalent MOSFETs:
•IRFB3206
•IRFB3256
•IRFB3307
•IRFB7540
To ensure long-term performance and reliability, it is recommended to operate the IRF3205 at least 20% below its maximum ratings. For example:
•Do not exceed a load voltage of 44V DC .
•Do not drive a continuous load of more than 88A .
•Use a proper heatsink with the transistor.
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