Transistors & MOSFETsCode d64f6df8c0
NCE65TF099F N Channel Super Junction Power MOSFET
Marked "NCE65TF099F" on the package with the NCE logo, this is Wuxi NCE Power Semiconductor's NCE65TF099F, part of their Super Junction Power MOSFET III family.
- Delivery in 2 to 4 working daysFree in Islamabad & Rawalpindi above Rs 5,000
- Cash on deliveryPay when your parcel arrives
- 7-day checking warrantyDead-on-arrival items replaced
- Packed with careAnti-static & padded packaging
Highlights
- PFC (Power Factor Correction) stages
- AC/DC power conversion
- Industrial power applications
- Fast chargers
- New energy vehicle (EV) charging piles and on-board chargers (OBC)
- 1 x NCE65TF099F N-Channel Super Junction MOSFET (TO-220F)
Specifications
- Type
- N-Channel Super Junction Power MOSFET (Super Junction III)
- Manufacturer
- Wuxi NCE Power Semiconductor
- Package Marking
- NCE65TF099F
- Drain-Source Voltage (VDS)
- 650V
- Drain Current (ID)
- 38A
- Gate Threshold Voltage
- 3.5V @ 250µA
- Power Dissipation
- 36W
- Total Gate Charge (Qg)
- 55nC @ 10V
- Junction Temperature Range
- 55°C to +150°C
- Compliance
- RoHS
About this product
Description
Marked "NCE65TF099F" on the package with the NCE logo, this is Wuxi NCE Power Semiconductor's NCE65TF099F, part of their Super Junction Power MOSFET III family. The series uses advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge, and this super junction MOSFET fits the industry's AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. It's also suited for applications like fast chargers, new energy vehicle charging piles, and on-board OBC (on-board charger) systems. The isolated TO-220F package with the standard 3-pin layout allows direct heatsink mounting without a separate insulating pad.
Key Specifications
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RDS(ON), typical: 89mΩ @ 10V, 19A
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RDS(ON), max: 0.109Ω
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