MGW20N60D IGBT Power Transistor

This Insulated Gate Bipolar T ransistor (IGBT ) is co-packaged with a soft recover y ultra-fast rectifie r a nd u se s a n advanced termination scheme to p rovid e a n e nhance d a nd r eliabl e high voltage - blocking capability . Short circuit rated IGBT’ s are specifically suite d f or a pplications requirin g a g uarantee d s hor t circuit withstand tim e s uc h a s M oto r C ontro l D rives . F as t switching characteristics of IGBT MOSFET r esul t in inefficient operations at high f requencies. Co - packaged IGBT’ s save space, reduce assembly time and cost. Features And Specifications Of MGW20N60D IGBT MOSFET Power Transistor: • Maximum Power Dissipation (Pc ), W: 142W • Maximum Collector-Emitter Voltage |Vce| , V: 600V • Collector-Emitter saturation Voltage |Vcesat |, V: 2.3V • Maximum Gate-Emitter Voltage |Veg| , V: 20V • Maximum Collector Current |Ic| , A: 20A • Maximum Junction Temperature (Tj) , °C: 150 • Rise Time, nS : 59 • Maximum Collector Capacity (Cc) , pF: 2280pF • High Short Circuit Capability • Soft Recovery Free Wheeling Diode is included in the package MGW20N60D DataSheet Package Include: • 1 x MGW20N60D IGBT IC Best online shopping website for MGW20N60D IGBT Power MOSFET Transistor insulated gate bipolar transistor in a cheap price in Lahore Islamabad Karachi Faislabad Multan Quetta Sukkur Peshawar Rawalpindi Gujranwala and all over Pakistan