Testers & Measuring InstrumentsCode 1deeea9ccd

LCR T4 Transistor Tester ESR Meter

Name: LCR T4 Transistor Tester ESR Meter
SKU: 1deeea9ccd
Price: 1999 PKR
Availability: InStock

Specifications: Material: Printed circuit board Power Mode: 6F22 Display: 128 * 64 LCD backlight Testing Speed: 2 seconds (1 minute is normal for large…

Rs 1,999Rs 3,600-44%

In stock Price updated 15 Nov 2026

Total: Rs 1,999

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Delivery in 2 to 4 working daysFree in Islamabad & Rawalpindi above Rs 5,000
Cash on deliveryPay when your parcel arrives
7-day checking warrantyDead-on-arrival items replaced
Packed with careAnti-static & padded packaging

Highlights

Powered by 9V layer-built battery, can use 2 li-ion batteries to form an 8.4V battery pack for long time power.
Measuring bipolar transistor current amplification factor and base-emitter threshold voltage.
Automatic test the pin of a component, and display on the 128 * 64 LCD backlight.
Measure the gate and gate capacitance of the MOSFET threshold voltage.
One-button operation, automatic shutdown, Only 20nA shutdown current.
Reverse breakdown voltage is less than 4.5V, the Zener diode can be identified.
2uF more capacitors can simultaneously measure the equivalent series resistance ESR values.
Via the base-emitter threshold voltage and high current amplification factor to identify Darlington transistors.

Specifications

Material: Printed circuit board
Power Mode: 6F22
Display: 128 * 64 LCD backlight
Testing Speed: 2 seconds (1 minute is normal for large capacitor)
Shutdown Current: 20nA
Displayed Value: 25pf-100mF (resolution 1pF)
Inductance: 0.01mH-20H
Resistance: 2100
Power Volatge: 9V layer-built battery / 2 li-ion batteries to form a 8.4V battery pack
The Highest Measured Value: 50M ohms
Provided Testing Current: Approx. 6mA

About this product

LCR-T4 Transistor Tester Diode Triode Capactitance ESR LCR Meter MOS PNP NPN LCRT4

•Can simultaneously measure two resistors and resistor symbol is displayed. Displayed on the right with a decimal value of 4.

•Can detect the transistor, MOSFET protection diode amplification coefficient, and the base to determine the emitter transistor forward biased voltage.

•Automatic detection of NPN and PNP transistors, n-channel and p-channel MOSFET, diode (including double diode), thyristor, transistor, resistor, capacitor, and other components.