Transistors & MOSFETsCode 8f4ca72285
K40T120 IGBT Power Semiconductor
The K40T120 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics…
- Delivery in 2 to 4 working daysFree in Islamabad & Rawalpindi above Rs 5,000
- Cash on deliveryPay when your parcel arrives
- 7-day checking warrantyDead-on-arrival items replaced
- Packed with careAnti-static & padded packaging
Highlights
- Motor control
- Power supplies
- Inverters
- Solar power systems
- Uninterruptible power supplies (UPS)
- Fast switching speed for efficient power conversion
- High current capacity to handle demanding loads
- Low on-state voltage for reduced power losses
Specifications
- Parameter
- Value
- Collector Current (I C )
- 40 A
- Junction Temperature (T j )
- 40°C to +150°C
About this product
The K40T120 IGBT (Insulated Gate Bipolar Transistor) is a high-performance power semiconductor designed to meet the demands of modern power electronics applications. With its fast switching speed, high current capacity, and low on-state voltage, the K40T120 is an ideal choice for a wide range of applications, including:
Key Benefits of the K40T120 IGBT
•Rugged construction for reliability and durability
•Wide operating temperature range for versatile applications
Technical Specifications
Parameter
Value
Collector-Emitter Breakdown Voltage (V CE(sus) )
1200 V
Collector Current (I C )
40 A
Collector-Emitter Saturation Voltage (V CE(sat) )
1.8 V (typ)
Input-Output Capacitance (C iss )
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