Transistors & MOSFETsCode 4b60c3da6c
K2611 MOSFET Transistor
This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology.
- Delivery in 2 to 4 working daysFree in Islamabad & Rawalpindi above Rs 5,000
- Cash on deliveryPay when your parcel arrives
- 7-day checking warrantyDead-on-arrival items replaced
- Packed with careAnti-static & padded packaging
Specifications
- Type
- Power MOSFET
- Number of Elements
- 1
- Polarity
- N
- Channel Mode
- Enhancement
- Drain-Source On-Res
- 1.4Ohm
- Drain-Source On-Volt
- 900V
- Gate-Source Voltage (Max)
- ±30V
- Continuous Drain Current
- 9A
- Power Dissipation
- 150W
- Operating Temp Range
- 55C to 150C
- Mounting
- Through Hole
- Pin Count
- 3 +Tab
- Package Type
- TO-3PN
About this product
This N-Channel enhancement mode power field effect transistors are produced using Winsemi's proprietary, planar stripe ,DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Type | Power MOSFET | Number of Elements | 1 | Polarity | N | Channel Mode | Enhancement | Drain-Source On-Res | 1.4Ohm | Drain-Source On-Volt | 900V | Gate-Source Voltage (Max) | ±30V | Continuous Drain Current | 9A | Power Dissipation | 150W | Operating Temp Range | -55C to 150C | Operating Temperature Classification | Military | Mounting | Through Hole | Pin Count | 3 +Tab | Package Type | TO-3PN | Packaging | Tape and Reel | Package Include: 1xK2611 Datasheet PDF Download :
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