Transistors & MOSFETsCode 951488d8c6
IRF9540 p Channel Power MOSFET
- Delivery in 2 to 4 working daysFree in Islamabad & Rawalpindi above Rs 5,000
- Cash on deliveryPay when your parcel arrives
- 7-day checking warrantyDead-on-arrival items replaced
- Packed with careAnti-static & padded packaging
Highlights
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- P-Channel
- Fully Avalanche Rated
- Package TO-220-3
- Transistor Polarity P
Specifications
- Drain-to-source voltage VDS
- 100 V 2
- Maximum Pulse drain current
- 72 A 2
- Maximum Power dissipation PD
- 150 W 2
- Gate-to-source voltage VGS
- ±20 V 2
- Peak diode recovery dv/dt
- 5.5 V/ns 2
- Total gate charge QG
- 61 nC 2
- On-state resistance RDS
- 0.20 Ω 2
- Operating temperature range
- 55 to +175 ˚C 2
About this product
This advanced MOSFET technology has been especially tailored to reduce on-state resistance and provide superior switching performance and high avalanche energy strength 1 2 .
Feature
Specification
•Maximum Drain Source Voltage -100 V
•Maximum Continuous Drain Current -23 A
•Maximum Gate Source Voltage ±20V
•Power Dissipation 140 W
•Number of Elements per Chip 1
•Maximum Forward Voltage -100VDC
•Output Power 140W
•Peak Non-Repetitive Surge Current -76A
•Maximum Reverse Current -25uA
•Channel Mode P-Channel Enhancement
•Peak Reverse Recovery Time 67ns
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