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IRF840 N-channel 8A 500V Power MOSFET
Transistors & MOSFETsCode e2f625a251

IRF840 N-channel 8A 500V Power MOSFET

The IRF840 is an N-Channel Power MOSFET which can switch loads up to 500V.

Rs 110
In stock Price updated 15 Nov 2026
Total: Rs 110
  • Delivery in 2 to 4 working daysFree in Islamabad & Rawalpindi above Rs 5,000
  • Cash on deliveryPay when your parcel arrives
  • 7-day checking warrantyDead-on-arrival items replaced
  • Packed with careAnti-static & padded packaging

Highlights

  • N-Channel Power MOSFET
  • Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
  • Drain-Source Resistance (RDS) is 0.85 Ohms
  • Rise time and the fall time is 23nS and 20nS
  • Available in To-220 package
  • Switching high power devices
  • Inverter Circuits
  • DC-DC Converters

Specifications

Pin Number
Pin Name
Continuous Drain Current (ID)
8A

About this product

The IRF840 is an N-Channel Power MOSFET which can switch loads up to 500V. The Mosfet could switch loads that consume up to 8A, it can turn on by providing a gate threshold voltage of 10V across the Gate and Source pin. Since the MOSFET is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with an I/O pin of a CPU. If you prefer a mosfet with low gate voltage then try IRF540N or 2N7002 etc. One considerable disadvantage of the IRF840 Mosfet is its high on-resistance (RDS) value which is about 0.85 ohms. Hence this mosfet cannot be used in applications where high switching efficiency is required. The Mosfet requires a driver circuit to provide 10V to the gate pin of this Mosfet the simplest driver circuit can be build using a transistor. It is relatively cheap and has very low thermal resistance, added to this the mosfet also has good switching speeds and hence can be used in DC-DC converter circuits. Pin Configuration: Pin Number | Pin Name | Description | 1 | Source | Current flows out through Source (maximum 8A) | 2 | Gate | Controls the biasing of the MOSFET (Threshold voltage 10V) | 3 | Drain | Current flows in through Drain | Features: • N-Channel Power MOSFET • Gate threshold voltage (VGS-th) is 10V (limit = ±20V) • Drain-Source Resistance (RDS) is 0.85 Ohms • Rise time and the fall time is 23nS and 20nS • Available in To-220 package Applications: • Switching high power devices • Inverter Circuits • DC-DC Converters • Control speed of motors • LED dimmers or flashers • High-Speed switching applications Datasheet: Download Package Includes:…

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