Transistors & MOSFETsCode cebf3e5ff4
IRF640 N-channel Power MOSFET
• Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements
- Delivery in 2 to 4 working daysFree in Islamabad & Rawalpindi above Rs 5,000
- Cash on deliveryPay when your parcel arrives
- 7-day checking warrantyDead-on-arrival items replaced
- Packed with careAnti-static & padded packaging
Highlights
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
Specifications
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Continuous Drain Current (Id)
- 18A
- Gate-Source Voltage (Vgs)
- 20V
- Gate Charge (Qg)
- 70 nC
- Operating Temperature Range
- 55-150C
- Power Dissipation (Pd)
- 150W
About this product
IRF640 third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 150 W.
Features:-
Detailed Specifications:-
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Drain-Source Breakdown Voltage (Vds)
200V
Continuous Drain Current (Id)
18A
Drain-Source Resistance (Rds On)
0.15Ohms
Gate-Source Voltage (Vgs)
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