

BC108
DC Current Gain (hFE) is 900 maximum
- Delivery in 2 to 4 working daysFree in Islamabad & Rawalpindi above Rs 5,000
- Cash on deliveryPay when your parcel arrives
- 7-day checking warrantyDead-on-arrival items replaced
- Packed with careAnti-static & padded packaging
Highlights
- Bi-Polar NPN Transistor
- DC Current Gain (hFE) is 900 maximum
- Continuous Collector current (IC) is 200mA
- Emitter Base Voltage (VBE) is 5V
- Base Current(IB) is 10mA maximum
- Available in TO-18 Metal Can Package
- Transition Frequency:150 MHz
- Noise Figure - 2 dB
Specifications
- Pin Number
- Pin Name
- Collector Dissipation
- 0.3 W
About this product
•Maximum Collector-Base Voltage |Vcb|: 30 V’
•Operating Junction Temperature Max (Tj): 175 °C
•Operating and Storage Junction Temperature Range -65 to +175 °C
•Collector Capacitance 5pF
BC108 is a generic semiconductor device that can be used to amplify or switch signals or power . The BC108 is an NPN Transistor , hence we need to provide a small amount of positive voltage to the base of the transistor and then only the required amount of current flows through the base of the transistor. To use this transistor as an amplifier, you need to get the gain value from the datasheet of the device. The gain value can differ depending upon the manufacturer, so it’s highly recommended to check out the datasheet of the specific device before you do the calculation. The maximum collector current of this transistor is rated at 200mA with a maximum emitter-base voltage of 5V. This transistor has a collector-emitter voltage of 30V and a collector base voltage of 5V. This transistor can operate with 150*C.
When this transistor is in biased condition, then it can allow a maximum current of 200mA across CE(Collector Emitter) Junction, this state of the transistor is called the saturation state and driving a load that consumes more current than 200mA may damage the device in this condition. As you already may know, a transistor is a current controlled device so when the base current is removed, the transistor becomes fully off, in this stage the transistor is working in its Cut-off Region and the Base Emitter voltage…








