Transistors & MOSFETsCode 7d6d198b67
2SA1013 Bipolar Transistor
Maximum collector power dissipation (Pc), W: 0.9
- Delivery in 2 to 4 working daysFree in Islamabad & Rawalpindi above Rs 5,000
- Cash on deliveryPay when your parcel arrives
- 7-day checking warrantyDead-on-arrival items replaced
- Packed with careAnti-static & padded packaging
Highlights
- Type - PNP
- Collector Dissipation - 9 W
- DC Current Gain (h fe ) - 60 to 200
- Transition Frequency - 50 MHz
- Operating and Storage Junction Temperature Range -55 to +150 C
Specifications
- Type Designator
- 2SA1013
- Material of transistor
- Si
- Polarity
- PNP
- Collector-Emitter Voltage
- 160 V
- Collector-Base Voltage
- 160 V
- Emitter-Base Voltage
- 6 V
- Collector Current
- 1 A
About this product
•Maximum collector-base voltage Ucb, V: 160
•Maximum collector-emitter voltage Uce, V: 160
•Maximum emitter-base voltage Ueb, V: 6
•Maximum collector current Ic max, A: 2
•Maksimalna temperatura (Tj), °C: 125
•Transition frequency (ft), MHz: 15
•Collector capacitance (Cc), pF: 35
•Forward current transfer ratio (hFE), min: 60
•Noise Figure, dB: - • Type - PNP
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