

2N3906 PNP Transistor
DC Current Gain (hFE) is 300 maximum
- Delivery in 2 to 4 working daysFree in Islamabad & Rawalpindi above Rs 5,000
- Cash on deliveryPay when your parcel arrives
- 7-day checking warrantyDead-on-arrival items replaced
- Packed with careAnti-static & padded packaging
Highlights
- Bi-Polar PNP Transistor
- DC Current Gain (hFE) is 300 maximum
- Continuous Collector current (IC) is 200mA
- Emitter Base Voltage (VBE) is 5V
- Base Current(IB) is 5mA maximum
- Collector Emitter Voltage (VCE) is 40V
- Collector Base Voltage (VCB) is 40V
- Available in To-92 Package
About this product
2N3906 PNP TRANSISTOR is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds.
The 2N3906 is manufactured in a plastic TO-92 case. When looking at the flat side with the leads pointed downward, the three leads emerging from the transistor are, from left to right, the emitter, base, and collector leads.
The 2N3906 is specified by a collector current of 200 mA, collector-base and collector-emitter voltages of 40 V, for power dissipation of 300 mW. Its current gain bandwidth product Ft is 250 MHz, with a beta of at least 100.
The complementary NPN transistor to the 2N3906 is the 2N3904. Both types were registered by Motorola Semiconductor in the mid-1960s.
Number
Name
Description
1
Emitter
Current Drains out through emitter
2
Base
Controls the biasing of transistor
3








